IAR_stm8l151c8,block擦除与block写入不成功
编译器：IAR芯片：stm8l151c8t6 64K的FLASH
目的：使用Block擦除和写入数据
严格按照以下步骤操作：
结果编译时出现错误：Error: no block or place matches the pattern "ro code section FLASH_CODE in stm8l15x_flash.o"
根据错误在place in NearData 中添加了ro section FLASH_CODE，
编译时有警告：
Warning: placement includes a mix of sections with content (example "ro code section FLASH_CODE in stm8l15x_flash.o") and sections without content (example "rw data section .near.data in Flash.o")
Warning: placement includes a mix of writable sections (example "rw data section .near.data in Flash.o") and non-writable sections (example "ro code section FLASH_CODE in stm8l15x_flash.o")
测试程序时，程序卡死，RAM汇编指令：
怎么测试都通过不了Block擦除与读写。
请教各位大神，我是哪里操作不对吗？我哪里设置不对呢？
谢谢了，各位大神！！！
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