SM32f429ZI通过FSMC读写SDRAM失败，求指教！
使用SM32f429ZI芯片，通过FSMC读写32M的SDRAM（IS42S16160J），测试读写失败。每次擦除和写入的数据在memory窗口看都只有第一行显示，后面全是FF。感觉memory是不可信的。
执行全片擦除（全片写入0x00）后结果如下图：
http://bbs.21ic.com/forum.php?mod=attachment&aid=OTU4Mzc2fDVkMzNlYzI5fDE1MTMyNTEyODV8ODQ3NDk0fDIzOTg2NzI%3D
而且发现擦除任意一个byte，在memory就会显示第一行全是0x00，然后其他行全是FF
执行全片写入后结果如下图：
http://bbs.21ic.com/forum.php?mod=attachment&aid=OTU4Mzc4fDhlOWNhOGRlfDE1MTMyNTEyODV8ODQ3NDk0fDIzOTg2NzI%3D
跟擦除一样，写入任意一个字节，都会在第一行显示该字节，其他行为FF。
所以觉得memory窗口显示不可信，使用软件去校验写入数据。将写入数据读出来，再与写入的对比，结果第一个字节就对不上。
下面是读写数据的代码：
while(1)
{
/*********************** 8-bits AHB transaction test ************************/
/* Erase SDRAM memory */
for (counter = 0x00; counter < IS42S16160J_SIZE*2; counter++)
{
*(__IO uint8_t*) (SDRAM_BANK_ADDR + counter) = (uint8_t)0x0;
}
/* Write data value to all SDRAM memory */
for (counter = 0; counter < IS42S16160J_SIZE*2; counter++)
{
*(__IO uint8_t*) (SDRAM_BANK_ADDR + counter) = (uint8_t)(ubWritedata_8b + counter);
}
/* Read back SDRAM memory and check content correctness*/
counter = 0;
uwReadwritestatus = 0;
while ((counter < IS42S16160J_SIZE) && (uwReadwritestatus == 0))
{
ubReaddata_8b = *(__IO uint8_t*)(SDRAM_BANK_ADDR + counter);
if ( ubReaddata_8b != (uint8_t)(ubWritedata_8b + counter))
{
uwReadwritestatus = 1;
}
counter++;
}
｝
SDRAM配置代码：
void bsp_InitExtSDRAM(void)
{
FMC_SDRAMInitTypeDefFMC_SDRAMInitStructure;
FMC_SDRAMTimingInitTypeDefFMC_SDRAMTimingInitStructure;
/* GPIO configuration for FMC SDRAM bank */
SDRAM_GPIOConfig();
/* Enable FMC clock */
RCC_AHB3PeriphClockCmd(RCC_AHB3Periph_FMC, ENABLE);
/* FMC Configuration ---------------------------------------------------------*/
/* FMC SDRAM Bank configuration */
/* Timing configuration for 90 Mhz of SD clock frequency (168Mhz/2) */
/* TMRD: 2 Clock cycles */
FMC_SDRAMTimingInitStructure.FMC_LoadToActiveDelay = 2;
/* TXSR: min=70ns (7x11.11ns) (6x11.9ns)*/
FMC_SDRAMTimingInitStructure.FMC_ExitSelfRefreshDelay = 6;//7;
/* TRAS: min=42ns (4x11.11ns) max=120k (ns) 37ns(4x11.9ns) */
FMC_SDRAMTimingInitStructure.FMC_SelfRefreshTime = 4;
/* TRC:min=70 (7x11.11ns) 60ns (6x11.9ns)*/
FMC_SDRAMTimingInitStructure.FMC_RowCycleDelay = 6;//7;
/* TWR:min=1+ 7ns (1+1x11.11ns) */
FMC_SDRAMTimingInitStructure.FMC_WriteRecoveryTime = 2;
/* TRP:20ns => 2x11.11ns 15ns (2x11.9ns)*/
FMC_SDRAMTimingInitStructure.FMC_RPDelay = 2;
/* TRCD: 20ns => 2x11.11ns 15ns (2x11.9ns)*/
FMC_SDRAMTimingInitStructure.FMC_RCDDelay = 2;
/* FMC SDRAM control configuration */
FMC_SDRAMInitStructure.FMC_Bank = FMC_Bank1_SDRAM; //FMC_Bank2_SDRAM;
/* Row addressing: */
FMC_SDRAMInitStructure.FMC_ColumnBitsNumber = FMC_ColumnBits_Number_9b;
/* Column addressing: --> , _12b = 16M,_11b = 8M */
FMC_SDRAMInitStructure.FMC_RowBitsNumber = FMC_RowBits_Number_13b;
FMC_SDRAMInitStructure.FMC_SDMemoryDataWidth= SDRAM_MEMORY_WIDTH;
FMC_SDRAMInitStructure.FMC_InternalBankNumber = FMC_InternalBank_Number_4;
/* CL: Cas Latency = 3 clock cycles */
FMC_SDRAMInitStructure.FMC_CASLatency = FMC_CAS_Latency_3;
FMC_SDRAMInitStructure.FMC_WriteProtection = FMC_Write_Protection_Disable;
FMC_SDRAMInitStructure.FMC_SDClockPeriod = SDCLOCK_PERIOD;
FMC_SDRAMInitStructure.FMC_ReadBurst = FMC_Read_Burst_Disable;//FMC_Read_Burst_Enable;//
FMC_SDRAMInitStructure.FMC_ReadPipeDelay = FMC_ReadPipe_Delay_1;//FMC_ReadPipe_Delay_0;//
FMC_SDRAMInitStructure.FMC_SDRAMTimingStruct= &FMC_SDRAMTimingInitStructure;
/* FMC SDRAM bank initialization */
FMC_SDRAMInit(&FMC_SDRAMInitStructure);
/* FMC SDRAM device initialization sequence */
SDRAM_InitSequence();
}
SDRAM_InitSequence函数：
static void SDRAM_InitSequence(void)
{
FMC_SDRAMCommandTypeDef FMC_SDRAMCommandStructure;
uint32_t tmpr = 0;
uint32_t timeout = SDRAM_TIMEOUT;
/* Step 3 --------------------------------------------------------------------*/
/* Configure a clock configuration enable command */
FMC_SDRAMCommandStructure.FMC_CommandMode = FMC_Command_Mode_CLK_Enabled;
FMC_SDRAMCommandStructure.FMC_CommandTarget = FMC_Command_Target_bank1;
FMC_SDRAMCommandStructure.FMC_AutoRefreshNumber = 1;
FMC_SDRAMCommandStructure.FMC_ModeRegisterDefinition = 0;
/* Wait until the SDRAM controller is ready */
while((FMC_GetFlagStatus(FMC_Bank1_SDRAM, FMC_FLAG_Busy) != RESET) && (timeout > 0))
{
timeout--;
}
/* Send the command */
FMC_SDRAMCmdConfig(&FMC_SDRAMCommandStructure);
/* Step 4 --------------------------------------------------------------------*/
/* Insert 100 ms delay */
bsp_DelayMS(100);
/* Step 5 --------------------------------------------------------------------*/
/* Configure a PALL (precharge all) command */
FMC_SDRAMCommandStructure.FMC_CommandMode = FMC_Command_Mode_PALL;
FMC_SDRAMCommandStructure.FMC_CommandTarget = FMC_Command_Target_bank1;
FMC_SDRAMCommandStructure.FMC_AutoRefreshNumber = 1;
FMC_SDRAMCommandStructure.FMC_ModeRegisterDefinition = 0;
/* Wait until the SDRAM controller is ready */
timeout = SDRAM_TIMEOUT;
while((FMC_GetFlagStatus(FMC_Bank1_SDRAM, FMC_FLAG_Busy) != RESET) && (timeout > 0))
{
timeout--;
}
/* Send the command */
FMC_SDRAMCmdConfig(&FMC_SDRAMCommandStructure);
/* Step 6 --------------------------------------------------------------------*/
/* Configure a Auto-Refresh command */
FMC_SDRAMCommandStructure.FMC_CommandMode = FMC_Command_Mode_AutoRefresh;
FMC_SDRAMCommandStructure.FMC_CommandTarget = FMC_Command_Target_bank1;
FMC_SDRAMCommandStructure.FMC_AutoRefreshNumber = 8;
FMC_SDRAMCommandStructure.FMC_ModeRegisterDefinition = 0;
/* Wait until the SDRAM controller is ready */
timeout = SDRAM_TIMEOUT;
while((FMC_GetFlagStatus(FMC_Bank1_SDRAM, FMC_FLAG_Busy) != RESET) && (timeout > 0))
{
timeout--;
}
/* Send the command */
FMC_SDRAMCmdConfig(&FMC_SDRAMCommandStructure);
/* Wait until the SDRAM controller is ready */
timeout = SDRAM_TIMEOUT;
while((FMC_GetFlagStatus(FMC_Bank1_SDRAM, FMC_FLAG_Busy) != RESET) && (timeout > 0))
{
timeout--;
}
/* Step 7 --------------------------------------------------------------------*/
/* Program the external memory mode register */
tmpr = (uint32_t)SDRAM_MODEREG_BURST_LENGTH_1 | //2******************************???*****
SDRAM_MODEREG_BURST_TYPE_SEQUENTIAL |
SDRAM_MODEREG_CAS_LATENCY_3 |
SDRAM_MODEREG_OPERATING_MODE_STANDARD |
SDRAM_MODEREG_WRITEBURST_MODE_SINGLE;
/* Configure a load Mode register command*/
FMC_SDRAMCommandStructure.FMC_CommandMode = FMC_Command_Mode_LoadMode;
FMC_SDRAMCommandStructure.FMC_CommandTarget = FMC_Command_Target_bank1;
FMC_SDRAMCommandStructure.FMC_AutoRefreshNumber = 1;
FMC_SDRAMCommandStructure.FMC_ModeRegisterDefinition = tmpr;
/* Wait until the SDRAM controller is ready */
timeout = SDRAM_TIMEOUT;
while((FMC_GetFlagStatus(FMC_Bank1_SDRAM, FMC_FLAG_Busy) != RESET) && (timeout > 0))
{
timeout--;
}
/* Send the command */
FMC_SDRAMCmdConfig(&FMC_SDRAMCommandStructure);
/* Step 8 --------------------------------------------------------------------*/
/* Set the refresh rate counter */
/* (15.62 us x Freq) - 20 */
/* Set the device refresh counter */
//FMC_SetRefreshCount(1385);
//168000000Hz/2 * 0.064s / 8192 = 656 è?600
FMC_SetRefreshCount(980);
/* Wait until the SDRAM controller is ready */
timeout = SDRAM_TIMEOUT;
while((FMC_GetFlagStatus(FMC_Bank1_SDRAM, FMC_FLAG_Busy) != RESET) && (timeout > 0))
{
timeout--;
}
}
使用的BANK1，行列13*9，芯片的各项配置是根据主频对照手册算的，不知道是否哪里配置还有问题，请教调试过SDRAM的大侠指导！谢谢。
本帖最后由 whtt 于 2017-12-15 16:13 编辑
基础不牢靠。。。
*(__IO uint32_t*) ADDRESS是啥意思懂不？就是把ADDRESS这个数强制转换为地址指针，再取这个指针中的内容。STM32是32位系统，能随便改成*(__IO uint8_t*) 吗？*(__IO uint8_t*) 就把ADDRESS头掐了，只剩后8位地址的内容，赶快看看你0X0000 00xx位置内容变了没:lol
本帖最后由 whtt 于 2017-12-15 16:15 编辑
每个地址内容都是8位，所以存8位数据就是内存地址+1；存16位数据就是内存地址+2；存32位数据就是地址+4。
地址本身是32位的
找到问题了，粗心大意，引脚配置错了... whtt 发表于 2017-12-15 16:06
基础不牢靠。。。
*(__IO uint32_t*) ADDRESS是啥意思懂不？就是把ADDRESS这个数强制转换为地址指针，再取 ...
*(__IO uint8_t*) ADDRESS，我的理解是这样的：
ADDRESS是一个32bit的数值；
(__IO uint8_t*) 将ADDRESS强制转换成地址指针，指针类型是uint8_t*，也就是单字节的指针，并不是说把ADDRESS强制转换成一个字节；
*(__IO uint8_t*) ADDRESS是取这个单字节指针的内容；
这么理解有问题吗？ *(__IO uint8_t*) ADDRESS，我的理解是这样的：
ADDRESS是一个32bit的数值；
(__IO uint8_t*) 将ADDRESS强制转换成地址指针，指针类型是uint8_t*，也就是单字节的指针
....................................................
以上说的都没错，指针类型是uint8_t，而不是指针指向的内容是uint8_t whtt 发表于 2017-12-16 11:28
*(__IO uint8_t*) ADDRESS，我的理解是这样的：
ADDRESS是一个32bit的数值；
(__IO uint8_t*) 将ADDRESS强 ...
举个例子，我是这样理解，比如ADDRESS=0x12345678，*(__IO uint8_t*) ADDRESS就代表从0x12345678这个地址存放的第一个字节，*(__IO uint32_t*) ADDRESS就代表从0x12345678这个地址开始存放的4个字节。
再举个例子，我在程序中定义一个指针型的变量，uint16_t*ADDRESS,当我给这个指针变量赋值的时候，是应该给ADDRESS赋值一个地址吧，而且这个地址指向的是一个uint16_t型的变量，比如uint16_taaa= 0x0001; aaa的地址就是之前例子中的0x12345678，那么ADDRESS = &aaa；即：ADDRESS = 0x12345678；
现在如果我做个强制转换：
*(uint8_t*) ADDRESS的值是不是应该就是aaa的低字节0x01，并不是把0x12345678强制转换成0x78，然后以0x00000078为地址，取该地址内容。
所以还是想不通您说的这个问题，以上是我的理解。您看下有问题吗？
经过开发板的实际仿真，你是对的，(*) ADDRESS把地址转换为指针；(uint8_t*) ADDRESS指明指针指向的类型是uint3_t；*(uint8_t*) ADDRESS为该指针指向的内容。 whtt 发表于 2017-12-17 08:08
经过开发板的实际仿真，你是对的，(*) ADDRESS把地址转换为指针；(uint8_t*) ADDRESS指明指针指向的类型是u ...
一起学习
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