请问STM32写flash怎么总是写不进?
本帖最后由 vvhhbc1 于 2015-11-22 21:45 编辑stm32f030c8 内部flash空间区域为:
0x8000000 ~ 0x8001000
我的页定义为:
#define PAGE_SIZE(uint16_t)0x400/* Page size = 1KByte */
#define EEPROM_START_ADDRESS ((uint32_t)0x0800f400)
/* Pages 0 and 1 base and end addresses */
#define PAGE0_BASE_ADDRESS ((uint32_t)(EEPROM_START_ADDRESS + 0x000))
#define PAGE0_END_ADDRESS ((uint32_t)(EEPROM_START_ADDRESS + (PAGE_SIZE - 1)))
#define PAGE1_BASE_ADDRESS ((uint32_t)(EEPROM_START_ADDRESS + PAGE_SIZE))
#define PAGE1_END_ADDRESS ((uint32_t)(EEPROM_START_ADDRESS + (2 * PAGE_SIZE - 1)))
初始化时, 去对页0写VALID_PAGE标志:
HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD, PAGE0_BASE_ADDRESS, VALID_PAGE);
最终是调用下面接口, 在地址0x0800f400处写入VALID_PAGE,
static void FLASH_Program_HalfWord(uint32_t Address, uint16_t Data)
{
/* Clean the error context */
pFlash.ErrorCode = HAL_FLASH_ERROR_NONE;
/* Proceed to program the new data */
SET_BIT(FLASH->CR, FLASH_CR_PG);
/* Write data in the address */
*(__IO uint16_t*)Address = Data; //////////////////这里, 写无效//////////////////////
}
请问为什么会写入无效呢??? 盼用的朋友能指点迷津, 谢谢!!!!!!!
写内部 flash要先解锁， 要先解锁，然后再擦除你要存储的区域。。。然后写入。再上锁。。。
参考例程：
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