写eeprom
请问，stm8s103k3内部eeprom写一个字节时间是多少？调用库函数时发现用时超过1ms而且不稳定，有时更高，请高人指点RE:写eeprom
没人回复呀 附上程序，请帮忙看下哪里耽误了读写的时间EEPROM.H文件内容：
/* Includes ------------------------------------------------------------------*/
#include "STM8S103k3u.h"
#define FLASH_DATA_START_PHYSICAL_ADDRESS ((unsigned long int)0x004000) /*!< Data EEPROM memory: start address */
#define FLASH_DATA_END_PHYSICAL_ADDRESS ((unsigned long int)0x00427F) /*!< Data EEPROM memory: end address */
#define FLASH_RASS_KEY1 ((unsigned char)0xAE) /*!< First RASS key */
#define FLASH_RASS_KEY2 ((unsigned char)0x56) /*!< Second RASS key */
unsigned char EEPROM_ReadByte(unsigned long int Address);
void EEPROM_ProgramByte(unsigned long int Address, unsigned char Data);
EEPROM.C文件内容
/* Includes ------------------------------------------------------------------*/
#include "EEPROM.h"
/* -------------------------------------------------------------------------- */
/* ROUTINE NAME: Check_EEPROM_Address. */
/* INPUT/OUTPUT: EEPROM Target Address. */
/* DESCRIPTION:Check_EEPROM_Address is available address. */
/* -------------------------------------------------------------------------- */
unsigned char Check_EEPROM_Address(unsigned long int Address)
{
if(Address >= FLASH_DATA_START_PHYSICAL_ADDRESS && Address
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